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inductionheatingseries reverseconductingigbtwithmonolithicbodydiode IHW30N110R3 datasheet industrialpowercontrol free datasheet http://
2 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 reverseconductingigbtwithmonolithicbodydiode features: ?powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly ?verytightparameterdistribution ?highruggedness,temperaturestablebehavior ?lowv cesat ?easyparallelswitchingcapabilityduetopositivetemperature coefficientinv cesat ?lowemi ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductivecooking ?microwaveoven keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IHW30N110R3 1100v 30a 1.55v 175c h30n110r3 pg-to247-3 g c e g c e free datasheet http://
3 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e g c e free datasheet http://
4 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 maximumratings parameter symbol value unit collector-emitter voltage v ce 1100 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 60.0 30.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 90.0 a turnoffsafeoperatingarea v ce 1100v, t vj 175c - 90.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 60.0 30.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 90.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 25 v powerdissipation t c =25c powerdissipation t c =100c p tot 333.0 166.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+175 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.45 k/w diode thermal resistance, junction - case r th(j-c) 0.45 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e free datasheet http://
5 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1100 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =30.0a t vj =25c t vj =125c t vj =175c - - - 1.55 1.85 2.00 1.75 - - v diode forward voltage v f v ge =0v, i f =30.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.38 1.41 1.55 - - v gate-emitter threshold voltage v ge(th) i c =0.70ma, v ce = v ge 5.1 5.8 6.4 v zero gate voltage collector current i ces v ce =1100v, v ge =0v t vj =25c t vj =175c - - - - 5.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30.0a - 15.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1460 - output capacitance c oes - 55 - reverse transfer capacitance c res - 45 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =880v, i c =30.0a, v ge =15v - 180.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-off delay time t d(off) - 350 - ns fall time t f - 16 - ns turn-off energy e off - 1.15 - mj t vj =25c, v cc =600v, i c =30.0a, v ge =0.0/15.0v, r g =15.0 w , l s =80nh, c s =39pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e free datasheet http://
6 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-off delay time t d(off) - 410 - ns fall time t f - 60 - ns turn-off energy e off - 1.80 - mj t vj =175c, v cc =600v, i c =30.0a, v ge =0.0/15.0v, r g =15.0 w , l s =80nh, c s =39pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e free datasheet http://
7 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =600v, v ge =15/0v, r g =15 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 20s 50s 500s 5ms dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 g c e g c e free datasheet http://
8 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 0 10 20 30 40 50 60 70 80 90 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 10 20 30 40 50 60 70 80 90 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 6 8 10 12 14 0 10 20 30 40 50 60 70 80 90 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 25 50 75 100 125 150 175 1 2 3 i c =15a i c =30a i c =60a g c e g c e free datasheet http://
9 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =15 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 10 20 30 40 50 60 10 100 1000 t d(off) t f figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =30a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 10 100 1000 t d(off) t f figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =600v, v ge =15/0v, i c =30a, r g =15 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.7ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 2 3 4 5 6 7 8 typ. g c e g c e free datasheet http://
10 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =15 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 15 30 45 60 0 1 2 3 4 e off figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, test circuit in fig. e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 0 1 2 3 e off figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =600v, v ge =15/0v, i c =30a, r g =15 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 1 2 e off figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =30a, r g =15 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 400 500 600 700 800 900 1.2 1.4 1.6 1.8 2.0 2.2 e off g c e g c e free datasheet http://
11 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 17. typicalgatecharge ( i c =30a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 40 80 120 160 200 0 2 4 6 8 10 12 14 16 220v 880v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c iss c oss c rss figure 19. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 4.5e-3 9.8e-6 2 0.1058 3.2e-4 3 0.152 2.9e-3 4 0.1827 0.01487178 figure 20. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 4.5e-3 9.8e-6 2 0.1058 3.2e-4 3 0.152 2.9e-3 4 0.1827 0.01487178 g c e g c e free datasheet http://
12 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 figure 21. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 0 10 20 30 40 50 60 t j =25c t j =175c figure 22. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 1 2 i c =15a i c =30a i c =60a g c e g c e free datasheet http://
13 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 g c e g c e pg-to247-3 free datasheet http://
14 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 g c e g c e pg-to247-3 t a a b b free datasheet http://
15 IHW30N110R3 inductionheatingseries rev.1.3,2013-02-12 revisionhistory IHW30N110R3 revision:2013-02-12,rev.1.3 previous revision revision date subjects (major changes since last revision) 1.1 2009-12-01 - 1.2 2011-01-21 package drawing rev. 05 1.3 2013-02-12 layout change welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2013infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g c e pg-to247-3 t a a b b free datasheet http://

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